ROHM's production volume of transistors is world's top class and Rohm transistors had been getting refined in course of complying timely with the market needs. "Energy saving", "space saving" and "high reliability" are creeds in ROHM's development concept for field-effect transistor MOSFET, bipolar transistor, and digital transistor (which internally contains resistors for digital circuit applications; invented first in the world by ROHM).

ROHM utilizes original advanced technology in order to offer a broad lineup of high reliability, low loss parts in a variety of package types.
In addition, cutting-edge expertise in the small-signal and mid-/high-power fields have enabled development of high-quality Schottky and Fast recovery diodes.

SiC is emerging as the most viable candidate in the search for a next-generation low-loss element due to its low ON resistance and superior characteristics under high temperatures.
ROHM is leading the forefront in the development of SiC power devices and modules for improved power savings in a number of applications, from high efficiency inverters in DC/AC converters for solar/wind power supplies and electric/hybrid vehicles to power inverters for industrial equipment and air conditioners.