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DTDG series transistors are developed for drive circuit of solenoid/motor/relay, containing resistors and zener diode internally, having the function of absorbing back electromotive force surge voltage from L-load to avoid the breakdown of transistor by overload voltage. |
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| Parts | VCE(V) | IC(A) | hFE | R1(kΩ) | R2(kΩ) | Equivalent Circuit | Package |
|---|---|---|---|---|---|---|---|
| DTDG14GP | 60+/-10 | 1 | 300+ | - | 10 | ![]() |
MPT3 |
| DTDG23YP | 60+/-10 | 1 | 300+ | 2.2 | 10 | ![]() |
MPT3 |
| QSH29 | 60+/-10 | 0.5 | 500+ | - | 10 | ![]() |
TSMT6 |
When a transistor is used to drive inductive load s (such as relay/coil/transformer/motor), back electromotive force is generated and it may destroy the transistor. However, if the back electromotive force absorption element is built in, such as the case of Rohm's DTDG transistor, the breakdown can be avoided.
[Door/Window controller]
MOSFET
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Bipolar Transistors
Digital Transistors
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