Next50
Power devices are a key technology in power electronics that efficiently controls electrical power by switching between AC and DC voltage. These devices are used in many applications, such as power control and motor control in consumer electronics, trains, and electric vehicles.
While power devices currently employ silicon (Si), the physical limitations of this material result in limited electric current capacity, including low resistance to high temperatures and significant electricity loss. Such issues have focused attention on silicon carbide (SiC) for use in next-generation power devices, and its development is now a subject of global competition.
ROHM has developed the industry’s first high-performance trench metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating SiC. We have successfully developed a pilot version of a high-capacity device that is merely 3-mm square and exceeds 100 amperes in capacity. ROHM is the first company in the industry to get closer to achieving practical application of a next-generation power device. We are now a world leader in this field.
The SiC power device can be used to convert electricity for applications requiring high electric current such as hybrid vehicles, electric vehicles, power transmission equipment, and industrial equipment. It achieves much greater performance than conventional power devices by reducing electricity loss while significantly reducing size and weight. ROHM’s development of the SiC trench MOSFET and large SiC SBD chips represents a huge leap forward toward successful utilization of high-current full SiC modules and is raising the expectations of the industry.
Next-generation power devices improve power efficiency and reduce the power demand of products. If more than 50% of the current power devices were replaced with SiC power devices by 2016, it is estimated that power consumption would be reduced by the equivalent of the output of four nuclear power plants by 2020 in Japan alone.* This is a technology that reduces CO2 emissions and is beneficial to the world in terms of both energy and the environment.
*Source: Engineering Advancement Association of Japan
In addition to developing SiC power devices, ROHM has been engaged in R&D of next-generation power systems made with silicon (for low voltage resistance) and gallium nitride (GaN, for medium voltage resistance) for different voltages. We have successfully developed a GaN power device with the industry’s highest performance. We are picking up the pace of the development in order to put these devices into practical use without delay.
